lithium niobate modulator tutorial lithium niobate modulator tutorial

Here we overcome these limitations and demonstrate monolithically integrated lithium niobate electro-optic modulators that feature a CMOS-compatible drive voltage, support data rates up to 210. b, High-speed data modulation set-up. Open Access Rao, A. A. Acousto-optical modulation of thin film lithium niobate waveguide devices. The left inset shows the orientation of the LN crystal where the optical axis is along the z direction. Femtojoule electro-optic modulation using a siliconorganic hybrid device. The light reflected from the EOM was collected by the same lensed fiber, routed by a circulator, and then delivered to a photodiode for detection. Opt. & Essiambre, R. J. On-chip generation of high-dimensional entangled quantum states and their coherent control. Express 21, 2700327010 (2013). The detector output was recorded either by a microwave network analyzer (Keysight N5235B) for characterizing the modulation bandwidth or by a sampling oscilloscope module (Keysight 54754A) to record the eye diagram of the switching signal. Nat. However, when the modulation frequency is tuned above 1.0GHz towards the cavity linewidth, the two side lobes moves towards each other and the spectral shape is considerably distorted, until around 1.8GHz where the transmission spectrum splits into three lobes, with the two side lobes located about 1.8GHz from the center. Nozaki, K. et al. Power efficiency is crucial for the application of electro-optic modulator (EOM), which depends sensitively on the physical size of the device27. 29, 20882096 (1993). & Lin, Q. Quantum correlations from dynamically modulated optical nonlinear interactions. CAS Commun. g Simulated optical mode field profile of the second-order TE-like cavity mode \({\mathrm{{TE}}}_{01}^{1}\). Nat. Mercante, A. J. et al. Sign up for the Nature Briefing newsletter what matters in science, free to your inbox daily. We propose and demonstrate a Mach-Zehnder modulator in Z-cut lithium niobate thin film (LNTF) with a vertical electric field structure. 03 April 2023, Nature Communications Weigel, P. O. et al. Express 26, 2372823739 (2018). Integrated lithium niobate electro-optic modulators operating at CMOS-compatible voltages. ISSN 1476-4687 (online) 6b). Liu et al. supervised the project. As shown in Fig. On the other hand, the full-swing extinction ratio of the EOMs is primarily determined by the external coupling of light to the modulator cavity. Miller, D. A. Low loss InP C-band IQ modulator with 40GHz bandwidth and 1.5V V Opt. We first assess the performance of our high symbol rate transmitter . Figure6d shows an example. Consequently, the transmission spectrum transforms into a multi-resonance spectrum (Fig. J. Lightwave Technol. Electron. Google Scholar. conceived the experiment. 8, 701705 (2014). Low V silicon photonics modulators with highly linear epitaxially grown phase shifters. Loncar is a cofounder of HyperLight Corporation, a startup which was launched to commercialize integrated photonic chips based on certain innovations developed in his lab. We have applied a voltage of 25V to the device (not shown in the figure) and did not observe any degradation. https://doi.org/10.1038/s41586-018-0551-y, DOI: https://doi.org/10.1038/s41586-018-0551-y. Provided by the Springer Nature SharedIt content-sharing initiative. ac, Normalized optical transmission of the 20-mm (a), 10-mm (b) and 5-mm (c) device as a function of the applied voltage, showing half-wave voltages of 1.4V, 2.3V and 4.4V, respectively. Nature 562, 101104 (2018). Top. a Full SEM image of the whole-device structure. Laser Photonics Rev. Quantum Electron. ADS Figure3 illustrates the schematic of the experimental testing setup, where the inset shows an optical image of the device with the RF probe in contact. Article Status and potential of lithium niobate on insulator (LNOI) for photonic integrated circuits. In most cases, lasers are stand-alone devices, external to the modulators, making the whole system more expensive and less stable and scalable. The orange curve in Fig. Nature 568, 373377 (2019). With a balance between the optical Q and the electro-optic tuning efficiency, we adopt a design with a 2.1-m gap and a 150-nm-thick wing layer to achieve the performance demonstrated in this paper, which is highlighted in red in Fig. @article{Ghosh2023WaferscaleHI, title={Wafer-scale heterogeneous integration of thin film lithium niobate on silicon-nitride photonic integrated circuits with low loss bonding interfaces}, author={Siddhartha Ghosh and Siva Yegnanarayanan and Dave Kharas and Matthew Ricci and Jason Plant and Paul W. Juodawlkis}, journal={Optics Express}, year . Silicon optical modulators. The demonstration of energy efficient and high-speed electro-optic modulation at the wavelength scale paves a crucial foundation for realizing large-scale LN photonic integrated circuits that are of immense importance for broad applications in data communication, microwave photonics, and quantum photonics. 1e) to achieve a critical coupling. Optica 4, 15361537 (2017). fully integrated spectrometers, optical remote sensing, and efficient frequency conversion for quantum networks, among other applications. Wood, M. G. et al. When the EOM is driven at a modulation frequency of 600MHz much smaller than the cavity linewidth of 1.4GHz, increasing the driving power simply broadens the transmission spectrum into one with two shallow side lobes, as shown in Fig. We believe this is the first LN EOM ever reported with such combined device characteristics and modulation performance. 1e) to enable a partial reflection/transmission, with the hole number optimized for a critical coupling to the cavity. High-speed plasmonic modulator in a single metal layer. Photonics 13, 454459 (2019). Nat. Now, researchers from the Harvard John A. Paulson School of Engineering and Applied Sciences (SEAS) in collaboration with industry partners at Freedom Photonics and HyperLight Corporation, have developed the first fully integrated high-power laser on a lithium niobate chip, paving the way for high-powered telecommunication systems, fully integrated spectrometers, optical remote sensing, and efficient frequency conversion for quantum networks, among other applications. PSI offers ultra-high-speed lithium niobate phase modulators. Quantum frequency conversion and single-photon detection with lithium niobate nanophotonic chips, Integrating planar photonics for multi-beam generation and atomic clock packaging on chip, Sub-1 Volt and high-bandwidth visible to near-infrared electro-optic modulators, http://www.fujitsu.com/jp/group/foc/en/products/optical-devices/100gln/, http://eospace.com/pdf/EOSPACEbriefProductInfo2017.pdf, https://www.thorlabs.com/newgrouppage9.cfm?objectgroup_id=3948, https://doi.org/10.1109/CSICS.2015.7314513. Light Sci. High-speed electro-optic modulation underlies many important applications ranging from optical communication1, microwave photonics2, computing3, frequency metrology4 to quantum photonics5. 35, 346396 (2017). A 100, 043811 (2019). We provide a standard modulator package, as well as customized modulator chips, packages and services for integration . Lithium Niobate Electro-Optic Modulators, Fiber-Coupled (1260 nm - 1625 nm) Up to 40 GHz Lithium Niobate (LiNbO 3) Modulators Fiber-Coupled, High-Speed Modulation Intensity, Phase, or I/Q X-Cut or Z-Cut Devices LNP6118 40 GHz Phase Modulator with Polarizer, Z-Cut LN81S-FC 10 GHz Intensity Modulator, X-Cut LNLVL-IM-Z Figure7a shows the electro-optic modulation response of the device (blue curve), which exhibits a 3-dB modulation bandwidth up to around 17.5GHz. The red column represents the parameter design used for the EOMs demonstrated in the main text. c, d, Numerically simulated microwave (c) and optical (d) field distributions (both shown in Ez components) in the cross-section of the thin-film modulator. a Schematic of half of the cross-section of the EOM structure. a Recorded transmission spectrum of the EOM cavity as a function of applied DC voltage from 0 to 4.5V, with a voltage step of 0.5V. b Recorded resonance shift as a function of applied DC voltage, where the experimental data are shown in black dots and the blue line is a linear fitting to the data. Phys. Lett. ADS This can be changed simply by engineering the photonic-crystal mirror on the other side to function as the output port. New light sheet holography overcomes the depth perception challenge in 3D holograms, First-of-its-kind metalens can focus extreme ultraviolet light, An unprecedented look at biological energy on the sub-cellular level, Harvard John A. Paulson School of Engineering and Applied Sciences. For EOM, we adopt one-dimensional photonic-crystal nanobeam as the basic underlying structure (Fig. DOI: 10.1364/OL.426083 Abstract L V cm, and the 3 dB electro-optical bandwidth is about 55 GHz. The device also exhibits a second-order TE-like cavity mode \({\mathrm{{TE}}}_{01}^{1}\) (Fig. Gap denotes the spacing between the gold electrode and the LN cavity, and tw denotes the thickness of the waveguide wing layer. b, c Electro-optic tuning efficiency and optical quality factor of the device as a function of Gap and tw, simulated by the FEM method. Chen, X. et al. Appl. Notomi, M., Nozaki, K., Shinya, A., Matsuo, S. & Kuramochi, E. Toward fJ/bit optical communication in a chip. Miller, D. A. Article Silicon optical modulators. volume562,pages 101104 (2018)Cite this article. Our traveling-wave design and advanced index-matching technologies enable optical response over the entire millimeter-wave spectrum (up to 300 GHz). High-speed Femto-Joule per bit silicon-conductive oxide nanocavity modulator. & Fan, S. Complete optical isolation created by indirect interband photonic transitions. The cavity mode exhibits an extremely small electro-optic modal volume of 1.52(/n)3~0.58m3 (where n is the refractive index of LN). Extended Data Fig. Tzuang, L. D., Fang, K., Nussenzveig, P., Fan, S. & Lipson, M. Non-reciprocal phase shift induced by an effective magnetic flux for light. Light Sci. 1e), with the lattice constant varying from 450 to 550nm, is designed and placed in front of the left mirror to reduce the coupling loss. Herein, we review the progress in microstructure and domain. 8b. Lu, H. et al. Nature 562, 101104 (2018). Liu, K., Ye, C. R., Khan, S. & Sorger, V. J. npj Quantum Information This value primarily reaches the photon-lifetime limit of the EOM cavity (~11ps), as the electrode circuit has much broader spectral response as indicated by the flat S11 reflection spectrum shown in the inset of Fig. Anyone you share the following link with will be able to read this content: Sorry, a shareable link is not currently available for this article. Opt. Integrated lithium niobate photonics is a promising platform for the development of high-performance chip-scale optical systems, but getting a laser onto a lithium niobate chip has proved to be one of the biggest design challenges, said, , the Tiantsai Lin Professor of Electrical Engineering and Applied Physics at SEAS and senior author of the study. Provided by the Springer Nature SharedIt content-sharing initiative. and M.L. M.L., J.L., and Y.H. We are also able to achieve high-speed electro-optic switching of at 11Gbs1, with switching energy as low as 22fJ per bit. Google Scholar. Photon. Photon. Science 298, 14011403 (2002). The modulators enable efficient electro-optic driving of high-Q photonic cavity modes in both adiabatic and non-adiabatic regimes, and allow us to achieve electro-optic switching at 11 Gb s1 with a bit-switching energy as low as 22 fJ. PubMed Central We thank J. Khan for discussions on the LN platform, H. Majedi for help with the equipment, and C. Reimer, S. Bogdanovi, L. Shao and B. Desiatov for feedback on the manuscript. On the other hand, the electrodes are currently placed far from the photonic-crystal cavity so as to leave the optical mode intact to achieve a high optical Q. Reed, G. T., Mashanovich, G., Gardes, F. Y. Quantum Electron. Science 358, 630632 (2017). 34, 29412951 (2016). Now, researchers from the Harvard John A. Paulson School of Engineering and Applied Sciences (SEAS) in collaboration with industry partners at Freedom Photonics and HyperLight Corporation, have developed the first fully integrated high-power laser on a lithium niobate chip, paving the way for high-powered telecommunication systems. Compact 1D-silicon photonic crystal electro-optic modulator operating with ultra-low switching voltage and energy. The cavity resonance exhibits a coupling depth of 93%, corresponding to a full-swing extinction ratio of 11.5dB. A notable decrease of optical Q is not observed until the gap is reduced to below 2.3m. Optica 5, 233236 (2018). Q.L. Long haul telecommunication networks, data center optical interconnects, and microwave photonic systems all rely on lasers to generate an optical carrier used in data transmission. The electro-optic modulation demonstrated in the previous section indicates the potential high-speed operation of the EOMs. 5 Comparison of integrated and conventional LN modulators. Li, M., Liang, H., Luo, R., He, Y. The images or other third party material in this article are included in the articles Creative Commons license, unless indicated otherwise in a credit line to the material. PubMed performed numerical simulations. M.L., U.A.J., and S.X. 4, 518526 (2010). Correspondence to Numerical simulations show that the device exhibits a small capacitance C of C=~22fF, which is more than one order of magnitude smaller than other LN EOMs1,13,14,15,16,17,18,19,20,21,22,23,24,25,26. Optica 4, 12511258 (2017). Wlbern, J. H. et al. Here, we fabricate a multimode microring resonator with an intrinsic Q of 6 106, which exhibits a propagation loss 50 times lower than that of a single-mode LN microring fabricated under the same process. The electrodes are designed to be placed close to the photonic-crystal resonator (Fig. A second exposure is then performed to define the waveguide structure, which is partially etched by 150nm with the same process. 1f). To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. 3). & Fan, S. Synthetic space with arbitrary dimensions in a few rings undergoing dynamic modulation. a Recorded scattering parameter S21 for two devices with optical Q of ~14,000 (blue curve) and ~20,000 (orange curve), respectively. B. Attojoule optoelectronics for low-energy information processing and communications. Lithium niobate etching is not required for making the hybrid optical waveguides. Although attempts have been made to explore the electro-optic effect in LN photonic crystals40,41,42, the low device quality and poor optoelectronic integration unfortunately limit seriously the operation speed. The current generation of lithium niobate modulators are bulky, expensive, limited in bandwidth and require high drive voltages, and thus are unable to reach the full potential of the material. As a result, a full air cladding would strongly limits the electro-optic coupling, leading to a low efficiency of electro-optic tuning as indicated by the individual black column in Fig. This work demonstrates the first (to the best of our knowledge) thin film lithium niobate electro-optic modulator operating at a wavelength of 1064 nm. Optica 1, 112118 (2014). As an example, a gap of ~1.5m would not only result in an optical Q of ~5000 that helps increase the operation bandwidth to ~45GHz, but also improve the electro-optic tuning efficiency by about 31% to 2.38GHzV1, as highlighted in blue in Fig. Yuan, L., Xiao, M., Lin, Q. Zhang, X. et al. By combining thin-film lithium niobate devices with high-power lasers using an industry-friendly process, this research represents a key step towards large-scale, low-cost, and high-performance transmitter arrays and optical networks. It has a bias control section that integrates with a tap monitor for stable operation. [29] Owing to the disparity between the dielectric constants of lithium niobate and silica, the electrical field primarily affected the LN core through the slab. b Detailed transmission spectrum of the fundamental TE-like cavity mode \({\mathrm{{TE}}}_{01}^{0}\) at a wavelength of 1554.47nm, with the experimental data shown in blue and the theoretical fitting shown in red. Google Scholar. One-dimensional photonic-crystal nanobeams exhibit exceptional capability of controlling light confinement. The data sets generated and/or analysed during the current study are available from the corresponding authors on reasonable request. High-Q photonic resonators and electro-optic coupling using silicon-on-lithium-niobate. A review of lithium niobate modulators for fiber-optic communications systems. Figure4a shows the transmission spectrum of an EOM when the laser is scanned in the telecom band. IEEE J. Quantum Electron. Lithium niobate (LiNbO3) modulator can be regarded as a technology platform that can add values to optical networks and is suitable for addressing many issues. Publishers note: Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations. Lithium Niobate Nonlinear Thermal Waveguide MODE Automation API Nonlinear Optics Photonic Integrated Circuits - Active Computing Second-harmonic generation (SHG) in a Lithium Niobite - LiNbO3 (LNO) nanophotonic waveguide is studied using temperature modulation to achieve efficient phase matching. Nature thanks M. Hochberg and the other anonymous reviewer(s) for their contribution to the peer review of this work. Essentially, only the 10-m long point-defect cavity requires electric driving to achieve electro-optic modulation. Full Text electro optic modulator 10.1109/LPT.2021.3056913. Nat. Photon. Low-loss plasmon-assisted electro-optic modulator. 6, 6982 (2000). Opt. The fully on-chip design achieves a full-swing extinction ratio of 11.5dB. For direct CMOS driving, the RF amplifier is bypassed. Dong, P. et al. J. Lightwave Technol. Ghelfi, P. et al. 6c, where a driving power of 16mW (corresponding peak-to-peak driving voltage, Vpp, of Vpp=2.5V) splits the cavity resonance into five with notable magnitudes (black curve), resulting in a cavity transmission with five side lobes (blue curve). Publishers note Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations. By submitting a comment you agree to abide by our Terms and Community Guidelines. Thin film lithium niobate electro-optic modulator with terahertz operating bandwidth. & Capmany, J. You are using a browser version with limited support for CSS. In this research, we used all the nano-fabrication tricks and techniques learned from previous developments in integrated lithium niobate photonics to overcome those challenges and achieve the goal of integrating a high-powered laser on a thin-film lithium niobate platform.. This work was performed in part at the Cornell NanoScale Facility, a member of the National Nanotechnology Coordinated Infrastructure (National Science Foundation, ECCS-1542081). IEEE Sel Top. Laser Photon. Hybrid Silicon and Lithium Niobate Modulator Abstract: Hybrid Lithium Niobate (LN) and Silicon photonic (SiPh) integration platform has emerged as a promising candidate to combine the scalability of silicon photonics with the excellent modulation performance of LN. Rao, A. et al. Nature High-quality lithium niobate photonic crystal nanocavities. Lu, H. et al. The flexible electro-optic modulation shown here may offer a convenient method for controlling the spectrotemporal properties of photons inside the cavity and for creating exotic quantum states48 that are crucial for quantum photonic applications. https://doi.org/10.1038/s41586-018-0551-y, Complementary Metal Oxide Semiconductor (CMOS). Google Scholar. has protected the intellectual property arising from the Loncar Labs innovations in lithium niobate systems. Xu, Q., Schmidt, B., Pradhan, S. & Lipson, M. Micrometre-scale silicon electro-optic modulator. This value is significantly larger than those in other LN EOM resonators13,14,15,16,18,19,23,26, which is primarily benefited from the strong optical field confinement, large optical and electric field overlap, and the resulting compact optical and electric integration offered by our devices. wrote the manuscript with contribution from all authors. and Q.L. Nguyen, H. C., Hashimoto, S., Shinkawa, M. & Baba, T. Compact and fast photonic crystal silicon optical modulators. Boes, A., Corcoran, B., Chang, L., Bowers, J. Lett. The measured electrical BER is 3.6105, limited by the signal distortion from the electronic circuit. Femtofarad optoelectronic integration demonstrating energy-saving signal conversion and nonlinear functions. Opt. Express 23, 2307223078 (2015). PubMed Integrated modulator platforms based on materials such as silicon, indium phosphide or polymers have not yet been able to meet these requirements simultaneously because of the intrinsic limitations of the materials used. Over 67GHz bandwidth and 1.5V InP-based optical IQ modulator with nipn heterostructure. Express 20, 2246522474 (2012). 9, 525528 (2015). Photon. As such, the photonic-crystal mirror on the right side of the defect cavity is designed to be of 100% reflection, while that on the left side has decreased number of holes (Fig. Here, we present a heterogeneously integrated EOM based on the lithium niobate-on-insulator (LNOI) platform. 1f. Optica 1, 112118 (2014). To show this phenomenon, we applied a sinusoidal RF signal at a certain frequency to the EOM and monitored the transmission spectrum of the device by scanning laser back and forth across the cavity resonance. In 2015 Optical Fiber Communications Conference and Exhibition 13 (2015); https://doi.org/10.1364/OFC.2015.Th4E.3. J. Lightwave Technol. Review and perspective on ultrafast wavelength-size electro-optic modulators. A conventional modulator (b) also uses a buffer oxide layer for velocity matching, but on top of LN which further compromises the electro-optic overlap. On the other hand, lithium niobate electro-optic modulators, the workhorse of the optoelectronic industry for decades9, have been challenging to integrate on-chip because of difficulties in microstructuring lithium niobate. Recently, thin-film monolithic LN11,12 emerges as a promising platform, where low-loss and high-quality photonic integration together with the strong Pockels effect enables superior modulation performance13,14,15,16,17,18,19,20,21,22,23,24,25,26, showing great potential as an excellent medium for photonic integrated circuits and future photonic interconnect. Optica 6, 845853 (2019). Jiang, W. et al. Nat. Figure2 shows a fabricated device (see Methods for the details of device fabrication). Wang, C. et al. Photonics 13, 359364 (2019). It, however, degrades considerably the optical Q of the cavity (Fig. High-speed Pockels modulation and second-order nonlinearities are key components in optical systems, but CMOS-compatible platforms like silicon and silicon nitride lack these capabilities. Electron. The research is published in the journal Optica. You are using a browser version with limited support for CSS. b Zoom-in image of the photonic-crystal resonator and electrodes, corresponding to the dashed rectangular region in a. c Further zoom-in image showing the detailed structure of the photonic-crystal defects cavity, corresponding to the dashed rectangular region in b. 6, 488503 (2012). Deep learning with coherent nanophotonic circuits. Shakoor, A. et al. To improve the electro-optic coupling, we utilize a partially etched structure with a rib-waveguide-like cross-section (Figs. Rev. Increasing the electrical driving power now does not perturb the positions of the resonance dips, but rather changes their relative magnitudes since the magnitudes of the created sidebands depends on the driving amplitude48. e, Group refractive indices for both optical and microwave signals as a function of the buried oxide thickness. C.W., M.Z., X.C. Photon-level tuning of photonic nanocavities. Optica 6, 860863 (2019). Song, M., Zhang, L., Beausoleil, R. G. & Willner, A. E. Nonlinear distortion in a silicon microring-based electro-optic modulator for analog optical links. PubMed Next, the team aims to increase the lasers power and scalability for even more applications. Google Scholar. Quant. The energy efficiency of the LN photonic-crystal EOM can be further improved since our current devices are not optimized. Karpiski, M., Jachura, M., Wright, L. J. InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD.